The Effects of Deposition and Processing Parameters on the Electronic Structure and Photoluminescence from Nitride-Passivated Silicon Nanoclusters

Abstract

Silicon nanoclusters (Si-ncs) exhibit unique optical properties as a result of quantum confinement effects. In particular, efficient luminescence from Si-ncs has driven research aimed at understanding the behaviour of these

materials due to their potential for the development of Si- based light sources. Commonly, Si-ncs are formed within

a Si-based dielectric. Difficulties arise in the understanding of these materials due to effects related to the Si-nc/dielectric interface, as well as due to the physical properties of the dielectric matrix. This situation is further compounded by fabrication specific issues, where the use of different deposition systems or source gases for the fabrication of Si-nc containing thin films can alter the observed optical behaviour of the materials.