A Comparison of the Effects of Silicon Oxide and Silicon Nitride Host Matrices on the Photoluminescence from Si Nanocrystals after High Temperature Annealing

dc.contributor.author	Roschuk, T.
dc.contributor.author	Zalloum, O. H. Y.
dc.contributor.author	Wojcik, J.
dc.contributor.author	Zhang, H.
dc.contributor.author	Mascher, P.
dc.date.accessioned	2022-02-03T11:34:52Z
dc.date.accessioned	2022-05-22T08:54:11Z
dc.date.available	2022-02-03T11:34:52Z
dc.date.available	2022-05-22T08:54:11Z
dc.date.issued	2007
dc.description.abstract	Si nanoclusters embedded in two different dielectric matrices, silicon oxide and silicon nitride, have been formed through annealing of Si-rich silicon oxide (SRSO) and Si-rich silicon nitride (SRSN) thin films. The light emitting properties of these materials have been analyzed through room temperature UV- excited photoluminescence (PL) experiments. Features of the PL spectra from both types are presented and the nature of light emission from Si-nanoclusters is discussed on the basis of the results from these two different host environments.	en_US
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/8227
dc.language.iso	en	en_US
dc.title	A Comparison of the Effects of Silicon Oxide and Silicon Nitride Host Matrices on the Photoluminescence from Si Nanocrystals after High Temperature Annealing	en_US
dc.type	Article	en_US

Files

Now showing 1 - 1 of 1

Name:: 26. A Comparison of the Effects of Silicon Oxide and Silicon Nitride Host Matrices on the Photoluminescence from Si Nanocrystals after High Temperature Annealing.pdf
Size:: 345.74 KB
Format:: Adobe Portable Document Format

Now showing 1 - 1 of 1