Double-Sided Low-Temperature Joining Technique for Power Cycling Capability at High Temperature

Abstract

There is a demand for higher junction temperatures in power devices, but the existing packaging technol ogy is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.