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Light emission from Si nanoclusters formed at low temperatures

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dc.contributor.author Pi, X. D.
dc.contributor.author Zalloum, O. H. Y.
dc.contributor.author Roschuk, T.
dc.contributor.author Wojcik, J.
dc.contributor.author Knights, A. P.
dc.contributor.author Mascher, P.
dc.date.accessioned 2022-01-18T11:55:14Z
dc.date.accessioned 2022-05-22T08:56:52Z
dc.date.available 2022-01-18T11:55:14Z
dc.date.available 2022-05-22T08:56:52Z
dc.date.issued 2006-03-08
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/8491
dc.description.abstract Photoluminescence (PL) from amorphous Si nanoclusters (Si-ncls) formed by thin-film deposition via electron-cyclotron resonance plasma-enhanced chemical vapor deposition followed by annealing at temperatures ⩽875°C has been investigated. We find that Si-ncls grow very slowly after their initial nucleation at low temperatures. An increase in the size of Si-ncls, which can be controlled by the annealing temperature, induces a redshift in the Si-ncl PL peak. While the emitted optical power is more than 100 times smaller than that of Si nanocrystals formed in an identically deposited film, it is increased by a factor of up to approximately four times following hydrogen passivation. The incorporation of hydrogen causes a redshift in the PL peak position, suggesting a partial hydrogenation induced bond distortion of the Si-ncls. This redshift decreases with increasing hydrogen ambient annealing temperature. The authors thank Dr. D. Comedi for insightful comments and important discussions. This work is supported by the Natural Sciences and Engineering Research Council of Canada, Ontario Centers of Excellence Inc., Photonics Research Ontario and the Ontario Research and Development Challenge Fund under the Ontario Photonics Consortium. en_US
dc.language.iso en en_US
dc.title Light emission from Si nanoclusters formed at low temperatures en_US
dc.type Article en_US

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