Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescence

Roschuk, T.; Wilson, P. R. J.; Li, J.; Zalloum, O. H. Y.; Wojcik, J.; Mascher, P.

dc.contributor.author	Roschuk, T.
dc.contributor.author	Wilson, P. R. J.
dc.contributor.author	Li, J.
dc.contributor.author	Zalloum, O. H. Y.
dc.contributor.author	Wojcik, J.
dc.contributor.author	Mascher, P.
dc.date.accessioned	2022-01-18T11:52:55Z
dc.date.accessioned	2022-05-22T08:56:43Z
dc.date.available	2022-01-18T11:52:55Z
dc.date.available	2022-05-22T08:56:43Z
dc.date.issued	2009-12-15
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/8470
dc.description.abstract	The X-ray absorption near edge structure (XANES) and X-ray excited optical luminescence (XEOL) of a set of photoluminescent rare earth (RE) (Tb, Ce) doped silicon oxide (SiOx) thin films, having compositions ranging from O-rich (32% Si) to Si-rich (36% Si), were analyzed at the Si and O K-edges. The results show that luminescence from these materials is correlated with the excitation of O-related energy states, and demonstrate that the composition and bonding structure of the silicon oxide host matrix play an active role in determining the luminescent properties of these materials, although the microstructure of the films may vary from film to film	en_US
dc.language.iso	en	en_US
dc.publisher	Wiley-VCH	en_US
dc.relation.ispartofseries	DOI;10.1002/pssb.200945531
dc.title	Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescence	en_US
dc.type	Article	en_US