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Light Emission from Rare-Earth Doped Silicon Nanostructures

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dc.contributor.author Li, J.
dc.contributor.author Zalloum, O. H. Y.
dc.contributor.author Roschuk, T.
dc.contributor.author Heng, C. L.
dc.contributor.author Wojcik, J.
dc.contributor.author Mascher, P.
dc.date.accessioned 2022-01-18T11:55:08Z
dc.date.accessioned 2022-05-22T08:56:37Z
dc.date.available 2022-01-18T11:55:08Z
dc.date.available 2022-05-22T08:56:37Z
dc.date.issued 2008-03-27
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/8451
dc.description.abstract Rare earth (Tb or Ce)-doped silicon oxides were deposited by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD). Silicon nanocrystals (Si-ncs) were formed in the silicon-rich films during certain annealing processes. Photoluminescence (PL) properties of the films were found to be highly dependent on the deposition parameters and annealing conditions. We propose that the presence of a novel sensitizer in the Tb-doped oxygen-rich films is responsible for the indirect excitation of the Tb emission, while in the Tb-doped silicon-rich films the Tb emission is excited by the Si-ncs through an exciton-mediated energy transfer. In the Ce-doped oxygen-rich films, an abrupt increase of the Ce emission intensity was observed after annealing at 1200◦ C. This effect is tentatively attributed to the formation of Ce silicate. In the Ce-doped silicon- rich films, the Ce emission was absent at annealing temperatures lower than 1100◦ C due to the strong absorption of Si-ncs. Optimal film compositions and annealing conditions for maximizing the PL intensities of the rare earths in the films have been determined. The light emissions from these films were very bright and can be easily observed even under room lighting conditions. en_US
dc.language.iso en en_US
dc.publisher Hindawi Publishing Corporation en_US
dc.relation.ispartofseries DOI;10.1155/2008/295601
dc.title Light Emission from Rare-Earth Doped Silicon Nanostructures en_US
dc.type Article en_US

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