A Comparison of the Effects of Silicon Oxide and Silicon Nitride Host Matrices on the Photoluminescence from Si Nanocrystals after High Temperature Annealing

Roschuk, T.; Zalloum, O. H. Y.; Wojcik, J.; Zhang, H.; Mascher, P.

dc.contributor.author	Roschuk, T.
dc.contributor.author	Zalloum, O. H. Y.
dc.contributor.author	Wojcik, J.
dc.contributor.author	Zhang, H.
dc.contributor.author	Mascher, P.
dc.date.accessioned	2022-02-03T11:34:52Z
dc.date.accessioned	2022-05-22T08:54:11Z
dc.date.available	2022-02-03T11:34:52Z
dc.date.available	2022-05-22T08:54:11Z
dc.date.issued	2007
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/8227
dc.description.abstract	Si nanoclusters embedded in two different dielectric matrices, silicon oxide and silicon nitride, have been formed through annealing of Si-rich silicon oxide (SRSO) and Si-rich silicon nitride (SRSN) thin films. The light emitting properties of these materials have been analyzed through room temperature UV- excited photoluminescence (PL) experiments. Features of the PL spectra from both types are presented and the nature of light emission from Si-nanoclusters is discussed on the basis of the results from these two different host environments.	en_US
dc.language.iso	en	en_US
dc.title	A Comparison of the Effects of Silicon Oxide and Silicon Nitride Host Matrices on the Photoluminescence from Si Nanocrystals after High Temperature Annealing	en_US
dc.type	Article	en_US