Abstract:
Silicon nanoclusters (Si-ncs) exhibit unique optical
properties as a result of quantum confinement effects. In
particular, efficient luminescence from Si-ncs has driven
research aimed at understanding the behaviour of these
materials due to their potential for the development of Si-
based light sources. Commonly, Si-ncs are formed within
a Si-based dielectric. Difficulties arise in the
understanding of these materials due to effects related to
the Si-nc/dielectric interface, as well as due to the
physical properties of the dielectric matrix. This situation
is further compounded by fabrication specific issues,
where the use of different deposition systems or source
gases for the fabrication of Si-nc containing thin films can
alter the observed optical behaviour of the materials.
